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MAX5890
14-Bit, 600Msps, High-Dynamic-Performance
DAC with LVDS Inputs
_______________________________________________________________________________________
3
ELECTRICAL CHARACTERISTICS (continued)
(AVDD3.3 = DVDD3.3 = AVCLK = 3.3V, AVDD1.8 = DVDD1.8 = 1.8V, external reference VREFIO = 1.2V, output load 50
double-terminat-
ed, transformer-coupled output, IOUT = 20mA, TA = -40°C to +85°C, unless otherwise noted. Specifications at TA
≥ +25°C are guar-
anteed by production testing. Specifications at TA < +25°C are guaranteed by design and characterization. Typical values are at TA
= +25°C.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
fOUT = 16MHz
89
fCLK = 200MHz,
0dBFS
fOUT = 30MHz
85
fOUT = 16MHz
79
fCLK = 200MHz,
-12dBFS
fOUT = 30MHz
78
fOUT = 16MHz
76
81
fOUT = 30MHz
80
fOUT = 130MHz
71
Spurious-Free
Dynamic Range to
Nyquist
SFDR
fCLK = 500MHz,
0dBFS
fOUT = 200MHz
55
dBc
fCLK = 500MHz
fOUT1 = 29MHz,
fOUT2 = 30MHz,
-6.5dBFS per tone
-95
Two-Tone IMD
TTIMD
fCLK = 500MHz
fOUT1 = 129MHz,
fOUT2 = 130MHz,
-6.5dBFS per tone
-70
dBc
fCLK = 491.52MHz,
fOUT = 30.72MHz
82
WCDMA single
carrier
fCLK = 491.52MHz,
fOUT = 122.88MHz
73
fCLK = 491.52MHz,
fOUT = 30.72MHz
74
Adjacent Channel
Leakage Power Ratio
ACLR
WCDMA four carriers
fCLK = 491.52MHz,
fOUT = 122.88MHz
67
dB
Output Bandwidth
BW-1dB
(Note 2)
1000
MHz
REFERENCE
Internal Reference Voltage Range
VREFIO
1.14
1.2
1.26
V
Reference Input Voltage Range
VREFIOCR
Using external reference
0.10
1.2
1.32
V
Reference Input Resistance
RREFIO
10
k
Reference Voltage Temperature
Drift
TCOREF
±50
ppm/
°C
ANALOG OUTPUT TIMING (Figure 3)
Output Fall Time
tFALL
90% to 10% (Note 3)
0.4
ns
Output Rise Time
tRISE
10% to 90% (Note 3)
0.4
ns
Output Propagation Delay
tPD
Reference to data latency (Note 3)
2.5
ns
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